e 1 rf specifications (100% tested) characteristic symbol min typ max units gain (v dd = 28 v, p out = 125 w, i dq = 1.4 a total, f = 960 mhz) g ps 11.0 12.5 db power output at 1 db compression (v dd = 28 v, i cq = 1.4 a total, f = 960 mhz) p-1db 125 130 watts drain efficiency (v dd = 28 v, p out = 125 w, i dq = 1.4 a total, f = 960 mhz) h 50 55 % load mismatch tolerance (v dd = 28 v, p out = 125 w(pep), i dq = 1.4 a total, y 10:1 f = 959.9, 960 mhzall phase angles at frequency of test) all published data at t case = 25c unless otherwise indicated. ptf 10020 125 watts, 860C960 mhz goldmos ? field effect transistor 0 25 50 75 100 125 150 01234567 input power (watts) output power (watts ) v dd = 28 v i dq = 1.4 a total typical output power vs. input power 900 mhz 960 mhz 860 mhz package 20240 ? internally matched ? performance at 960 mhz, 28 volts - output power = 125 watts - power gain = 12.5 db typ - efficiency = 55% typ ? full gold metallization ? silicon nitride passivated ? back side common source ? 100% lot traceability description the ptf 10020 is an internally matched, 125 watt ldmos fet intended for large signal amplifier applications from 860 to 960 mhz. nitride surface passivation and gold metallization ensure excellent device lifetime and reliability. 10020 a-1234569813
ptf 10020 2 e electrical characteristics (100% testedcharacteristics, conditions and limits shown per side) characteristic conditions symbol min typ max units drain-source breakdown voltage v gs = 0 v, i d = 5 ma v (br)dss 65 volts drain-source leakage current v ds = 28 v, v gs = 0 v i dss 1.0 ma gate threshold voltage v ds = 10 v, i d = 75 ma v gs(th) 3.0 4.3 5.0 volts forward transconductance v ds = 10 v, i d = 3 a g fs 2.5 siemens maximum ratings parameter symbol value unit drain-source voltage (1) v dss 65 vdc gate-source voltage (1) v gs 20 vdc operating junction temperature t j 200 c total device dissipation at p d 290 watts above 25c derate by 1.67 w/c storage temperature range t stg C40 to +150 c thermal resistance (t case = 70c) r q jc 0.6 c/w (1) per side typical performance broadband test fixture performance 4 6 8 10 12 14 16 18 20 925 930 935 940 945 950 955 960 frequency (mhz) gain (db) 0 10 20 30 40 50 60 v dd = 28 v i dq = 1.4 a total p out = 125 w gain return loss efficiency % return loss (db ) - 5 -15 -25 -35 efficienc y broadband test fixture performance 4 8 12 16 20 860 870 880 890 900 frequency (mhz) gain (db) 0 10 20 30 40 50 60 v dd = 28 v i dq = 1.4 a total p out = 125 w gain return loss efficiency % return loss (db ) - 5 -15 -25 -35 efficienc y
ptf 10020 3 e typical performance efficiency vs. output power 0 10 20 30 40 50 60 70 80 30 50 70 90 110 130 output power (watts) efficiency (% ) v dd = 28 v i dq = 1.4 a total f = 960 mhz -60 -50 -40 -30 -20 -10 20 30 40 50 60 70 80 90 100 110 120 output power (watts-pep) imd (dbc) v dd = 28 v i dq = 1.4 a total f 1 = 941.9 mhz f 2 = 942.0 mhz 3rd order 5th 7th intermodulation distortion vs. output power output power vs. supply voltage 50 70 90 110 130 150 20 22 24 26 28 30 32 34 v ds , supply voltage output power (watts) i dq = 1.4 a total f = 960 mhz pin = 5.4 w power gain vs. output power 11 12 13 14 15 1 10 100 1000 output power (w) gain (db) i dq = 1.4 a i dq = 700 ma i dq = 350 ma v dd = 28 v f = 960 mhz capacitance vs. voltage (one side) * 0 20 40 60 80 100 120 140 160 180 0 10203040 supply voltage (volts) cds and cgs (pf) 0 3 6 9 12 15 18 21 24 27 crss (pf) c gs c ds c rss v gs = 0 v f = 1 mhz *this part is internally matched. measurements of the finished product will not yield these figures. 10 11 12 13 14 15 860 880 900 920 940 960 frequency (mhz) gain 50 70 90 110 130 150 v dd = 28 v i dq = 1.4 a total typical p out , gain & efficiency (at p-1db) vs. frequency output power (w ) efficiency (%) g a i n (db) output power & efficiency
ptf 10020 4 e frequency z source w z load w mhz r jx r jx 835 1.7 -8.9 2.3 -1.3 860 1.9 -9.3 2.3 -0.9 885 1.9 -9.8 2.3 -1.0 910 1.9 -11.8 2.2 -1.2 935 2.5 -12.9 2.2 -1.3 960 2.2 -12.8 2.2 -2.1 985 1.8 -11.0 2.2 -2.2 z source z load g d g s d impedance data (v dd = 28 v, i dq = 1.4 a, p out = 125 w) z 0 = 50 w bias voltage vs. temperature 0.94 0.96 0.98 1.00 1.02 1.04 -20 30 80 130 temp. (c) bias voltage (v) 0.40 1.32 2.25 3.17 4.09 5.02 voltage normalized to 1.0 v series show current (a) typical performance
ptf 10020 5 e typical scattering parameters (one side only) (v ds = 28 v, i d = 4 a) f s11 s21 s12 s22 (mhz) mag ang mag ang mag ang mag ang 800 0.974 176 0.657 -10.6 0.002 50.9 0.97 -172 810 0.974 175.9 0.66 -11.5 0.002 49 0.971 -172.1 820 0.974 175.7 0.662 -12.7 0.002 52.9 0.971 -172.3 830 0.974 175.6 0.666 -13.6 0.002 53.4 0.972 -172.4 840 0.972 175.4 0.669 -14.8 0.002 52.6 0.972 -172.5 850 0.972 175.4 0.672 -16 0.002 54.9 0.972 -172.7 860 0.971 175.2 0.674 -16.9 0.002 56.1 0.972 -172.8 870 0.969 175 0.679 -18 0.002 52.5 0.972 -172.8 880 0.968 174.9 0.686 -19.1 0.002 53.4 0.973 -173 890 0.966 174.8 0.695 -20.2 0.002 56.2 0.975 -173.1 900 0.964 174.7 0.705 -21.4 0.002 58.1 0.977 -173.2 910 0.963 174.6 0.716 -23 0.002 55.5 0.977 -173.4 920 0.961 174.3 0.729 -24.6 0.002 57.7 0.976 -173.6 930 0.958 174.2 0.743 -26.3 0.002 57 0.977 -173.6 940 0.956 174.1 0.757 -28.2 0.002 56.7 0.978 -173.8 950 0.953 174 0.774 -30.3 0.002 58.7 0.979 -174 960 0.95 173.8 0.791 -32.7 0.002 60.2 0.979 -173.9 970 0.946 173.8 0.807 -35.4 0.002 60 0.981 -174.1 980 0.942 173.7 0.821 -38.1 0.002 59.5 0.982 -174.2 990 0.937 173.6 0.838 -41 0.002 62 0.983 -174.3 1000 0.933 173.6 0.853 -44 0.002 62.2 0.983 -174.4 test circuit l 1, l 20 50 w , .030 l l 2, l 19 20 w , .080 l l 3, l 18 32 w , .191 l l 4, l 17 25 w , .500 l l 5, l 6 25 w , .091 l l 7, l 10 7 w , .056 l l 8, l 9 13.0 w , .017 l l 11, l 12 13.0 w , .017 l l 13, l 14 7.0 w , .093 l l 15, l 16 10.2 w , .030 l circuit board .028" dielectric thickness, e r = 4.0, alliedsignal, g200, 2 oz. copper schematic for f = 960 mhz dut ptf 10020 c1-2 15 pf, capacitor atc 100 b c3 0.35C3.5 pf, variable capacitor c4 7.5 pf, capacitor atc 100 a c5 1C9 pf, variable capacitor c6-7, c10, c13-14, c18 33 pf, capacitor atc 100 b c8, c11 10 m f, +10 v electrolytic capacitor c9, c12, c15, c19 0.01 m f, capacitor atc 100 b c16, c17, c20, c21 10 m f, +30 v electrolytic capacitor l1. l2 4 t urn, #20 awg, .120 i.d. r1, r2, r4, r5 1.0 k, w resistor r3, r6 5.1 k, 1/4 w resistor
ptf 10020 6 e artwork (1 inch ) ericsson microelectronics rf power products morgan hill, ca 95037 usa specifications subject to change without notice. l3 ? 1998 ericsson inc. eus/kr 1301-ptf 10020 uen rev. a 01-15-00 1-877-goldmos (465-3667) united states +46 8 757 4700 international e-mail: rfpower@ericsson.com www.ericsson.com/rfpower components layout (not to scale)
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